کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1518238 | 1511609 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of vacancy defect in InP crystal by positron lifetime measurement
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Positron lifetime measurements have been carried out on liquid-encapsulated Czochralski-grown undoped InP samples sliced from the middle part of ingots over the temperature range 10–300 K. And at 70 K, the spectra have been measured in darkness, under illumination of infrared LED, and with illumination off is one sample. The measurements at low temperature reveal different concentration of hydrogen indium vacancy complex VInH4 in these samples. A relatively higher concentration of VInH4 in samples grown from P-rich undoped InP melts can be shown. The increase of resistivity of these samples can be speculated when temperature is low enough.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issues 2–3, February–March 2008, Pages 372–375
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issues 2–3, February–March 2008, Pages 372–375
نویسندگان
Niefeng Sun, Luhong Mao, Weidong Mao, Hezou Wang, Xiang Wu, Keyun Bi, Zhengping Zhao, Weilian Guo, Xiawan Wu, Xiaolong Zhou, Bingke Chen, Yanjun Zhao, Kewu Yang, Tongnian Sun,