کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1518246 | 1511609 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Selective epitaxy of InP on Si(1 0 0) substrates prepared by liquid-phase epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
Selective liquid-phase (LPE) epitaxial growth of InP was performed on patterned Si(1 0 0) substrates. The growth temperature was rapidly cooled, then the crystal growth proceeded at constant temperature. As a result, area-selective epitaxy (ASE) and slight epitaxial lateral overgrowth (ELO) layers were achieved in narrow openings and small nuclei were observed in the wide openings. X-ray diffraction results show that the lattice strain in the InP nuclei on the Si substrate was fully relaxed. Huber etching revealed the dislocation-related etch pits in ASE layers, and it is shown that the etch pit density (EPD) is dependent on the length of open seed area.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issues 2–3, February–March 2008, Pages 411–414
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issues 2–3, February–March 2008, Pages 411–414
نویسندگان
Maki Sugai, Toshio Kochiya, Yutaka Oyama, Jun-Ichi Nishizawa,