کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1518255 | 1511609 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A novel process for forming an ultra-thin oxynitride film with high nitrogen topping
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have proposed an approach to grow ultra-thin oxynitride film with high nitrogen concentration (â13Â at%) on the top and low interface state density (Dit=2Ã1010Â cmâ2Â eVâ1). In general, a high-nitrogen oxynitride film provides a rather reliable and higher dielectric constant. In this method, oxynitride growth included three process stages-chemical oxide growth, nitridation and subsequent dry oxidation. By this technique, the films demonstrate the desirable nitrogen concentration profile and excellent properties in terms of low Dit, low leakage current, and high endurance in stressing. Better controllability in film thickness may be achieved because the oxidation rate of the nitride-chemical oxide is much smaller than that of the conventional oxide. Most importantly, this process is simple and fully compatible with current process technology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issues 2â3, FebruaryâMarch 2008, Pages 456-460
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issues 2â3, FebruaryâMarch 2008, Pages 456-460
نویسندگان
Chiung Hui Lai, Bo Chun Lin, Kow Ming Chang, Kuang Yeu Hsieh, Yi Lung Lai,