کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1518280 | 1511609 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The morphology of etch pits on a sapphire surface
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, the pits were successfully etched onto (0 0 0 1) or (112¯0) sapphire single crystal surfaces by using a Na2B4O7 solution. The difference in the morphology of etch pits on different planes of the sapphire was examined by atomic force microscopy measurements. It was found that the size of the etch pits was affected by the etching duration. The results of X-ray diffraction analysis also indicated the particular in-plane orientation of the etch pits on the sapphire surface. The relationship between the morphology of etch pit and the sapphire structure will be explained in the paper. In addition, the etching rates for the (0 0 0 1) and (112¯0) types of sapphire will be compared.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issues 2–3, February–March 2008, Pages 572–575
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issues 2–3, February–March 2008, Pages 572–575
نویسندگان
Che-Ming Liu, Jyh-Chen Chen, Yi-Cheng Huang, Hung-Lin Hsieh,