کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1518309 | 1511609 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Silicon single-charge transfer devices
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The single-electron device (SED) enables the control of electron motion on the level of an elementary charge. Single-charge transfer devices are special SEDs that enable single-electron transfer synchronized with the gate clock. They have the potential for extremely low transfer error rates and are expected to be building blocks for future information processing and electrical metrology. We have been pursuing the fabrication of Si-based SEDs using CMOS technology with the help of electron-beam lithography and have recently demonstrated the single-charge transfer devices. The devices are composed of one Si quantum dot sandwitched between two tiny MOS gates and can operate at much higher temperatures than those of former metal-based and compound-semiconductor-based devices. This opens up the possibility of the practical use of clocked single-charge transfer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issues 2â3, FebruaryâMarch 2008, Pages 702-707
Journal: Journal of Physics and Chemistry of Solids - Volume 69, Issues 2â3, FebruaryâMarch 2008, Pages 702-707
نویسندگان
Yukinori Ono, Akira Fujiwara, Katsuhiko Nishiguchi, Yasuo Takahashi, Hiroshi Inokawa,