Defect aspects in ultra-shallow GaAs sidewall tunnel junctions implemented with molecular layer epitaxy

Low temperature (290 °C) area selective regrowth (ASR) by the intermittent injection of TEGa and AsH3 in UHV was applied for the fabrication of ultra-shallow sidewall GaAs tunnel junctions. Tunnel junction characteristics are seriously dependent on the sidewall orientations and the surface treatment conditions just prior to the regrowth. The junction characteristics and those associations with defects were shown in view of the doping characteristics and the photocapacitance results. And the effects of quantization by the reduction of junction area were also shown.