Diode-end-pumped efficient 2533Â nm intracavity Raman laser with high peak power

We demonstrate the high peak power Raman laser output at 2533 nm by employing the 924 cm−1 Raman mode of BaWO4 crystal to achieve efficient Stimulated Raman Scattering conversion in a compact diode-end-pumped actively Q-switched Tm,Ho:GdVO4 laser. The influence of pulse repetition frequency on the output performances of the Raman laser is investigated. At a pulse repetition frequency of 4 kHz, the 2533 nm first-Stokes average output power of 800 mW is obtained with a 11.8 W incident pump power, corresponding to a diode-to-Stokes optical conversion of 6.8%. At a pulse repetition frequency of 1 kHz and an incident pump power of 7.3 W, the pulse width is 4.7 ns, the pulse energy is 312 µJ, and the corresponding peak power is as high as 67 kW.