کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1538874 | 996624 | 2009 | 4 صفحه PDF | دانلود رایگان |
The effect of polarization-matched AlGaInN electron-blocking layer and barrier layer on the optical performance of blue InGaN light-emitting diodes is numerically investigated. The polarization-matched AlGaInN electron-blocking layer and barrier layer are employed in an attempt to reduce the polarization effect inside the active region of the light-emitting diodes. The simulation results show that the polarization-matched AlGaInN electron-blocking layer is beneficial for confining the electrons inside the quantum well region. With the use of both polarization-matched AlGaInN electron-blocking layer and barrier layer, the optical performance of blue InGaN light-emitting diodes is greatly improved due to the increased overlap of electron and hole wavefunctions. The method proposed in this paper can also be applied to the light-emitting diodes operating in other spectral range.
Journal: Optics Communications - Volume 282, Issue 21, 1 November 2009, Pages 4252–4255