کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1564745 1514175 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
In situ Observation of Microstructure Evolution in 4H–SiC under 3.5 keV He+ Irradiation
ترجمه فارسی عنوان
مشاهدات درجای تکامل ریزساختار در 4H-SiC تحت تابش اشعه 3.5 کو او +
کلمات کلیدی
SiC ؛ TEM درجا؛ تابش درجا؛ دیسک حباب؛ ریزساختار
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی هسته ای و مهندسی
چکیده انگلیسی

4H–SiC was irradiated with 3.5 keV He+ ions using the MIAMI facility at University of Huddersfield. The evolution of microstructure and gas bubbles during the irradiation at 700 °C, 800 °C and 900 °C was observed by in situ transmission electron microscopy. Under irradiation, isolated bubbles and bubble discs formed in the SiC matrix. Bubble discs lying on {0001} and {10-10} crystal planes were beginning to form at ion fluence above 2.3 × 1020 He+/m2 at 700 °C. The density of bubble discs increased with increasing irradiation fluence. However, growth rates were different at different of the implantation periods and temperature holding periods. The nucleation and growth of the bubble discs were attributed to be coalescence of the adjacent He vacancies and combination of loop punching and trap mutation, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Nuclear Materials - Volume 471, 1 April 2016, Pages 149–153
نویسندگان
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