Retention and desorption behavior of tritium in Si related ceramics

Hydrogen isotope retention and desorption behaviors for Silicon carbide (SiC), Silicon nitride (Si3N4) and Silicon dioxide (SiO2) were studied to elucidate the fundamental process of hydrogen isotope in Si related ceramics by means of T-IP (tritium imaging plate), thermal desorption spectroscopy (TDS) and X-ray photoelectron spectroscopy (XPS). The tritium gas exposure at 673 K showed that tritium was precipitated on the surface for SiO2, although that for SiC was uniformly retained inside the bulk. The 0.2 keV D2+