Voltage-impulse-induced three-state non-volatile magnetization switching in FeSiBC/PZT multiferroic heterostructure

• Three reversible and stable voltage-impulse-induced residual stain states can be obtained.
• The three non-volatile states are obtained by specific voltage impulse excitation modes.
• Three-state non-volatile voltage-impulse-induced magnetization switching can be obtained.

We report non-volatile voltage-impulse-induced and stable three-state magnetization switching in a FeSiBC/lead zirconate titanate (PZT) multiferroic heterostructure at room temperature. The heterostructure was realized by depositing FeSiBC ferromagnetic film on a specific PZT substrate. The substrate contained interior defect dipoles through acceptor doping and had been previously poled and aged. Three repeatable and stable voltage-impulse-induced in-plane residual stain states could be obtained in the PZT substrate by applying specific voltage impulse excitation modes. These residual strain states induced three-state non-volatile magnetization switching in the heterostructure through strain-mediated magnetoelectric coupling between PZT and the ferromagnetic FeSiBC layer. Hysteresis loops presented significant differences among the three states without voltage excitation. Residual magnetism presented variations of approximately 30% and 41% compared with the minimum value. This method provides a promising approach to reduce the energy consumption in magnetization switching devices further compared with continuous electric field or magnetic bias field excitations.