کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1607236 | 1516234 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, energy relaxation mechanisms of electrons in AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT) structures with and without in situ Si3N4 passivation were investigated. Although the physical parameters of the samples were all different, the electron-temperature dependent power loss values were found to be identical. The study also sought to fit the current theoretical power loss in the LO-phonon regime to the experimental power-loss per carrier results. The calculated power loss offered a reasonably fit to the experimental data in the electron temperature range between 75 and 250Â K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 659, 25 February 2016, Pages 90-94
Journal: Journal of Alloys and Compounds - Volume 659, 25 February 2016, Pages 90-94
نویسندگان
G. Atmaca, S. Ardali, P. Narin, E. Kutlu, S.B. Lisesivdin, T. Malin, V. Mansurov, K. Zhuravlev, E. Tiras,