کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1607236 1516234 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation
چکیده انگلیسی
In this study, energy relaxation mechanisms of electrons in AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT) structures with and without in situ Si3N4 passivation were investigated. Although the physical parameters of the samples were all different, the electron-temperature dependent power loss values were found to be identical. The study also sought to fit the current theoretical power loss in the LO-phonon regime to the experimental power-loss per carrier results. The calculated power loss offered a reasonably fit to the experimental data in the electron temperature range between 75 and 250 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 659, 25 February 2016, Pages 90-94
نویسندگان
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