کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1609463 | 1516256 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Indium oxide octahedrons based on sol-gel process enhance room temperature gas sensing performance
ترجمه فارسی عنوان
اکادادن اکسید ایمن بر اساس فرآیند سل-ژل باعث افزایش حساسیت گازی در اتاق می شود
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کلمات کلیدی
اکسید هیدروژن، فیلم های نازک هشتاد و چهار سنجش گاز، نیمه هادی،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
چکیده انگلیسی
Indium oxide octahedrons were prepared on glass substrates through a mild route based on sol-gel technique. The preparation possesses characteristics including low temperature, catalyst-free and large production, which is much distinguished from the chemical-vapor-deposition based methods that usually applied to prepare indium oxide octahedrons. Detailed characterization revealed that the indium oxide octahedrons were single crystalline, with {1Â 1Â 1} crystal facets exposed. It was found that the spin-coating technique was key for achieving the indium oxide crystals with octahedron morphology. The probable formation mechanism of the indium oxide octahedrons was proposed based on the experiment results. Room temperature NO2 gas sensing measurements exhibited that the indium oxide octahedrons could significantly enhance the sensing performance in comparison with the plate-like indium oxide particles that prepared from the dip-coated gel films, which was attributed to the abundant sharp edges and tips as well as the special {1Â 1Â 1} crystal facets exposed that the former possessed. Such a simple wet-chemical based method to prepare indium oxide octahedrons with large-scale production is promising to provide the advanced materials that can be applied in wide fields like gas sensing, solar energy conversion, field emission, and so on.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 637, 15 July 2015, Pages 55-61
Journal: Journal of Alloys and Compounds - Volume 637, 15 July 2015, Pages 55-61
نویسندگان
Xiaohui Mu, Changlong Chen, Liuyuan Han, Baiqi Shao, Yuling Wei, Qinglong Liu, Peihua Zhu,