Research on the high indium content InGaAs multiple quantum wells wafers for λ > 1.55 μm laser diodes

• The longest wavelength of 1.889 μm among the InGaAs/InGaAsP strained MQWs samples was obtained with high crystal quality.
• AsH3 flow rate was found to promote much TMGa pyrolysis than TMIn in The high indium content InGaAs growth.
• The peak wavelength shift of the InGaAs/InGaAsP strained MQWs was found to increase at higher AsH3 flow rate.

The effects of TMIn flow rate and AsH3 flow rate on the photoluminescence spectra of the high indium content InGaAs multiple quantum wells for λ > 1.55 μm laser diodes have been investigated both experimentally and theoretically. The wavelength peak red-shifted about 4.8 nm for increasing 1 sccm H2 flow rate through TMIn under a AsH3 flow rate of 150 sccm, while the wavelength shift increases to 6.5 nm at a higher AsH3 flow rate of 300 sccm. Results show that more AsH3 flow rate will promote much TMGa pyrolysis than TMIn in the high indium content InGaAs growth. Considering the influence of growth parameters, the longest wavelength of 1.889 μm among the InGaAs/InGaAsP strained MQWs samples was obtained with high crystal quality.