کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1613796 1005601 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
In situ crystallization of sputter-deposited TiNi by ion irradiation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
In situ crystallization of sputter-deposited TiNi by ion irradiation
چکیده انگلیسی

TiNi is well known as a typical shape-memory alloy, and the shape-memory property appears only when the structure is crystalline. Until recently, the material has been formed as amorphous film by single-target sputtering deposition at first and then crystallized by being annealed at high temperature over 500 °C. Therefore, it has been difficult to make crystalline TiNi film directly on a substrate of polymer-based material because of the low heat resistance of substrate. In order to realize an actuator from the crystallized TiNi film on polymer substrates, the substrate temperature should be kept below 200 °C throughout the whole process. In our previous studies we have found that deposited film can be crystallized at very low temperature without annealing but with simultaneous irradiation of Ar ions during sputter-deposition. And we have also demonstrated the shape-memory effect with the TiNi film made by the new process.In order to investigate what parameters of the process contribute to the low-temperature crystallization, we have focused to the ion fluence of the ion irradiation. Resultantly, it was found that the transition from amorphous structure to crystal one has a threshold range of ion fluence.


► We developed a sputtering deposition process equipped with an ion irradiation system.
► Ion irradiation enables crystallization at lower substrate temperature.
► Ion fluence has an effective range for low-temperature crystallization.
► Crystallized films made on polyimide by the process show the shape memory effect.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 577, Supplement 1, 15 November 2013, Pages S237–S240
نویسندگان
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