Sputter deposition and characterization of Mn3CuN thin films

A systematic study on thin film preparation by means of reactive magnetron sputtering was carried out for an antiperovskite manganese compound Mn3CuN, a recently discovered ferromagnetic shape-memory alloy. We obtained a (1 1 1) oriented thin film that possesses a ferromagnetic transition temperature similar to stoichiometric bulk samples on an yttria-stabilized zirconia (YSZ) substrate. On the other hand, (1 0 0) oriented thin films were obtained on MgO substrates while the thin films were deficient in nitrogen. The correlation between the sputtering parameters and nitrogen deficiency was thoroughly investigated in order to reduce the nitrogen deficiency. The magnetization measurements of a Mn3CuN0.86 thin film revealed a magnetic anisotropy that is consistent with the behavior of magnetostriction of this material.

► We report a thorough study on thin film fabrication of Mn3CuN by reactive sputtering.
► A (1 1 1) oriented Mn3CuN thin film was obtained on an YSZ substrate.
► (1 0 0) oriented Mn3CuN1−δ thin films were obtained on MgO substrates.
► We observed a clear anisotropy in the magnetization curves of a Mn3CuN0.86 thin film.
► The magnetic anisotropy was consistent with the behavior of magnetostriction data.