The electrical characteristics of the Fe3O4/Si junctions

The Fe3O4/Si junctions have been fabricated. The Fe3O4 NPs have been characterized by using TEM and XRD. Detailed study of the current–voltage (I–V) plots and capacitance–voltage measurements of the device (at f = 500 kHz) has been executed. The characteristic parameters of the structure such as ideality factor, barrier height, and series resistance have been calculated from the I–V measurements. The rectification ratio was determined to be ∼3 × 104. The I–V characteristics clearly reveal the mechanism as ohmic at low voltage and that of trap-filled space charge limited current (SCLC) at higher voltage. The effect of X-ray irradiation on the junction characteristics has been studied using in situ current–voltage measurements. Diode parameters are found to vary as a function of the irradiation dose.

► The Fe3O4 films have been prepared on p-Si.
► Fe3O4/Si junctions have showed good rectifying.
► The trap-filled space charge-limited current (SCLC) is the dominant transport mechanism at large forward bias.