کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1637009 | 1516977 | 2013 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Si-doped diamond films prepared by chemical vapour deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effects of Si doping on morphology, components and structure characteristics of CVD diamond films were studied. Si-doped CVD diamond films were deposited on Si substrate by adding tetraethoxysilane (TEOS) into acetone as source of reactant gas. The morphology and microstructure of diamond films were characterized by scanning electron microcopy (SEM). The crystalline quality of diamond films was studied by Raman spectroscopy and X-ray diffractometry (XRD). The surface roughness of the films was evaluated with surface profilometer. The results suggest that Si doping tends to reduce the crystallite size, enhance grain refinement and inhibit the appearance of (111) facets. Raman spectra indicate that Si doping can enhance the formation of sp2 phase in diamond films. Moreover, Raman signal of SiC was detected, which suggests the existence of Si in the diamond films. Smooth fine-grained diamond (SFGD) film was synthesized at Si to C ratio of 1%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Transactions of Nonferrous Metals Society of China - Volume 23, Issue 10, October 2013, Pages 2962-2970
Journal: Transactions of Nonferrous Metals Society of China - Volume 23, Issue 10, October 2013, Pages 2962-2970
نویسندگان
Yu-xiao CUI, Jian-guo ZHANG, Fang-hong SUN, Zhi-ming ZHANG,