کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1641841 1517220 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Elastic strain induced improvement in the photocatalytic activity of semiconducting film exerted by the surface relief of Fe-Ni-Co-Ti alloy substrate
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Elastic strain induced improvement in the photocatalytic activity of semiconducting film exerted by the surface relief of Fe-Ni-Co-Ti alloy substrate
چکیده انگلیسی


• Imposed tensile strain to the semiconducting film using substrate surface relief.
• Surface relief of FeNiCoTi substrate was characterized by AFM.
• Tensile strain narrowed the bandgap of the film.
• Strain improved the photocatalytic degradation rate of methyl orange by 30%.

Theoretical simulation has indicated that elastic strain is a universal and effective technique to modify the band structure of semiconductors; however, experimental work concerning elastic strain effects on the photocatalysis has been seldom reported due to the difficulty in imposing strain to the semiconducting films. Here, Fe-Ni-Co-Ti alloy was selected as a substrate to strain engineer an ultrathin semiconducting film by taking advantage of the surface relief for the first time. Surface relief originated from the martensitic transformation of FeNiCoTi substrate. Results showed that α–Fe2O3 and NiFe2O4 composite film was tensile-strained biaxially with an average value of 0.47%, and tensile strain narrowed the bandgap of the semiconducting film. In addition, strain contributed to a 30% acceleration in the methyl orange degradation rate than that of the strain-free film.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 168, 1 April 2016, Pages 192–195
نویسندگان
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