کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1642151 1517222 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ti/Ni/Au contacts to n-SiC after low energy implantation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Ti/Ni/Au contacts to n-SiC after low energy implantation
چکیده انگلیسی
The effect of low energy implantation of P or C ions in 3 C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013-1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two-contact circular test structure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was 1.29×10−6 Ω cm2. The value of ρc increased significantly at an implant dose of 1×1015 ions/cm2. The dependence of Rsh and ρc on ion dose has been measured using both C and P implant species.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 166, 1 March 2016, Pages 39-42
نویسندگان
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