کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1645344 | 1517287 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructure and field emission property of Bridgman-grown Si-TaSi2 eutectic in situ composite
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Using an improved Bridgman technique with high temperature gradient (210 K/cm), directionally solidified Si-TaSi2 eutectic in situ composite with uniform and aligned TaSi2 fiber is obtained. The growth mechanism and field emission property of the Si-TaSi2 eutectic are investigated. It is revealed that the co-operative growth of two phases for Si-TaSi2 eutectic is related to the ratio of ÎSsi/ÎSTaSi2 (ÎS is the entropy of fusion). The novel TaSi2 sharp tip arrays with fiber curvature radius of 21 nm and fiber height of 2.79-6.45 µm are fabricated by selective wet etching at optimized parameters. The Si-TaSi2 cathode arrays obtained present a reasonable field emission performance with low turn-on electric field of 3.8 V/μm and threshold field of 6.5 V/μm and large emission area per tip of about 1874 nm2, which can be used as promising materials for field emitters.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 100, 1 June 2013, Pages 212-215
Journal: Materials Letters - Volume 100, 1 June 2013, Pages 212-215
نویسندگان
Xinyu Yang, Jun Zhang, Haijun Su, Ziqi Jie, Lin Liu, Hengzhi Fu,