کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1645784 | 1517295 | 2013 | 4 صفحه PDF | دانلود رایگان |
Controllable synthesis of hierarchical porous semiconductors films is highly desirable for high-performance electronics and optical devices. Herein, we report a facile hydrothermal synthesis method to fabricate three-dimensional hierarchical porous ZnO film on conductive substrate. The obtained ZnO film exhibits a net-like porous architecture with hierarchical porosity from mesoporosity to macroporosity. Interestingly, the ZnO film possesses mesoporous walls ranging from 2–5 nm. Besides, the as-prepared ZnO film also shows a high specific surface area of ∼237 m2 g−1 and a noticeable porosity up to 76%. A growth mechanism is also proposed. The developed strategy can be extended to the fabrication of other hierarchical porous metal oxides for applications in solar cells, gas sensors and thin-film batteries.
Hydrothermal-synthesized ZnO film has the combined properties of hierarchical porosity from mesoporosity to marcoporosity and high surface area.Figure optionsDownload as PowerPoint slideHighlights
► Hierarchically porous ZnO film is prepared via a hydrothermal synthesis method.
► Porous ZnO film possesses mesoporous walls.
► ZnO film shows high surface area and porosity.
Journal: Materials Letters - Volume 92, 1 February 2013, Pages 165–168