کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1645918 1517291 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of microstructure on voids nucleation in nanoporous Ge
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Influence of microstructure on voids nucleation in nanoporous Ge
چکیده انگلیسی

This paper reports about the mechanism of porous formation in bulk crystalline Ge wafers, poly-crystalline and amorphous Ge thin films as a consequence of Ge+ ion implantation at 300 keV, Ge+ fluence 5×1015 cm−2 or 1×1016 cm−2. Cross-section scanning electron microscopy and Rutherford backscattering spectrometry were used to characterize the nucleation mechanism of the nanoporous structure by revealing a uniform mechanism in the amorphous Ge thin layers, and a heterogeneous growth mechanism in bulk crystalline and poly-crystalline Ge substrates. The uniform growth is due to the presence of voids distributed over all the as-deposited amorphous films, which provide nucleation sites for the formation of the porous structure. Instead, the heterogeneous growth is catalyzed by the free surface and the film/substrate interface.


► Nanoporous Ge was prepared by self ion-implantation of 300 keV Ge+ in Ge.
► Ge thin films were grown with different microstructures by molecular beam epitaxy on SiO2.
► We compared the swelling in bulk and thin film Ge.
► The role of the film/substrate interface as nucleation site is reported.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 96, 1 April 2013, Pages 74–77
نویسندگان
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