کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1650943 | 1517332 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystallization and oxidation resistance properties of boron modified silicon oxycarbides derived from polymeric precursors by sol–gel method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Boron modified silicon oxycarbides (SiBOCs) were prepared from sol–gel derived pre-ceramic polymeric gels followed by pyrolysis at 950 °C under nitrogen. As-prepared SiBOC was found to be amorphous in nature and partially crystallized to SiO2 at 1500 °C. The effect of boron incorporation on the crystallization of SiBOC was studied and the result revealed that the tendency to crystallization decreased with increasing boron content. This is due to the formation of Si–O–B bridges at higher temperatures, which retards the crystallization of SiO2, evidenced from FTIR studies. SiBOC also exhibited excellent oxidation resistance ability at high temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 62, Issues 17–18, 30 June 2008, Pages 2547–2550
Journal: Materials Letters - Volume 62, Issues 17–18, 30 June 2008, Pages 2547–2550
نویسندگان
M.N. Muralidharan, N.C. Pramanik, P.A. Abraham, K. Stanly Jacob, N. Rani Panicker,