Homoepitaxial growth of GaN single crystals using gallium hydride

The growth of gallium nitride (GaN) single crystals was performed using gallium hydride (GaHx) as a Ga source. In this study, a GaN film with a smooth surface was obtained by homoepitaxial growth on a GaN film commercially produced by the Metal Organic Chemical Vapor Deposition (MOCVD-GaN). Photoluminescence spectrum of grown film revealed that GaN film obtained in this study shows excellent optical property. An increase in the growth rate was achieved with the amount of GaHx (x = 1, 2, 3) supplied to the growth portion. The amount of GaHx produced by a reaction between Ga and H2 was increased with the residence time of H2 in a Ga melt. The dependence of the growth rate and surface morphology on the growth condition was examined using Scanning Electron Microscopy (SEM).