کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1663943 | 1517997 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Resistive switching behavior of Ag/PMMA:Na/Ag devices for memory applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The fabrication of memory devices based on the Ag/PMMA:Na/Ag structure and their electrical characteristics are reported. The Ag/PMMA:Na/Ag devices show a hysteresis behavior with different Na contents. The most evident hysteresis behavior for memory effect, represented as the on/off current ratio, is found to be as high as 105 in Ag/PMMA:Na-180Â s/Ag devices. The carrier conduction mechanisms between the high and low resistance states and the transition states are further examined on the basis of trap-assisted space charge limited current theory. Such devices sustain at least 60 operation iterations and 100Â s duration tests. Hence, the idea of incorporating Na particles into the organic layer of memory devices creates a promising direction for the development of organic memory devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 612, 1 August 2016, Pages 61-65
Journal: Thin Solid Films - Volume 612, 1 August 2016, Pages 61-65
نویسندگان
Hou-Yen Tsao, Yu-Wu Wang, Zhi-Kui Gao,