کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1664191 | 1518007 | 2016 | 4 صفحه PDF | دانلود رایگان |
• Low-temperature solid-phase epitaxy using a-GeSn/c-Ge structures is developed.
• Solid-phase growth of GeSn is enhanced by increasing Sn concentration.
• Substitutional Sn concentrations increase with decreasing growth temperature.
• Epitaxial growth of GeSn (substitutional Sn concentration: ~ 8%) is achieved at 150 °C.
GeSn with a high substitutional Sn concentration (> 7%) is an attractive direct band gap material for high-efficiency photodevices that can be merged with large-scale integrated circuits (LSIs). To achieve GeSn with high Sn concentration, low-temperature solid-phase epitaxy using amorphous-GeSn (a-GeSn) (Sn concentration: 10%–36%)/crystal-Ge (c-Ge) stacked structures was investigated. Solid-phase growth of GeSn was enhanced as Sn concentration was increased, which enabled epitaxial growth at very low temperature (150–200 °C). Interestingly, concentrations of substitutional Sn increased with decreasing growth temperature. As a result, epitaxial growth of GeSn with substitutional Sn concentrations of ~ 8% was achieved by decreasing the growth temperature to 150 °C using a-GeSn (Sn concentration: 36%)/c-Ge stacked structures. This technique is expected to be useful to realize multi-function LSIs, where high-efficiency photodevices are integrated with transistors.
Journal: Thin Solid Films - Volume 602, 1 March 2016, Pages 20–23