Temperature behavior of electrical properties of high-k lead–magnesium–niobium titanate thin-films

This paper reports on the temperature dependence of the electrical properties of high-k lead–magnesium–niobium titanate thin films processed with different compositions (with and without nanoparticles) and with different annealing temperatures (450 °C and 750 °C). These characterization results support the ongoing investigation of the material's electrical properties which are necessary before the dielectric can be used in silicon-based IC applications.