کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667204 | 1008844 | 2012 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Resistance switching properties of molybdenum oxide films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Resistive random access memory (ReRAM) properties in which the resistance of the insulating material drastically changes by voltage application have recently attracted much attention. In this work, molybdenum oxide prepared by thermal oxidation of Mo films was studied to investigate its potential as a material exhibiting ReRAM switching. The samples oxidized between 400 and 600 °C were composed of MoO3 and were switchable. Current-to-voltage curves, which were measured in air at room temperature by using a Pt–Ir probe as the top electrode, indicated the yielding of both the monopolar and bipolar switching properties. The resistance on-off ratio was between 10 and 102.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 14, 1 May 2012, Pages 4762–4767
Journal: Thin Solid Films - Volume 520, Issue 14, 1 May 2012, Pages 4762–4767
نویسندگان
M Arita, H. Kaji, T. Fujii, Y. Takahashi,