کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667384 | 1008849 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The characteristics of sub-10Â nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The characteristics of sub-10Â nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors The characteristics of sub-10Â nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors](/preview/png/1667384.png)
چکیده انگلیسی
10 and 6 nm erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 10 nm n-type SB-MOSFET showed a large on/off current ratio (> 106) with low leakage current less than 10â 5 μA/μm due to the existence of the robust Schottky barrier between source and channel region. The saturation currents were 550 and 320 μA/μm when drain and gate voltages were 2 V and 3 V, for the 10 and 6 nm erbium-silicided n-type SB-MOSFETs, respectively. The manufactured SB-MOSFETs exhibited superior short channel characteristics due to the existence of Schottky barrier between source and channel region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 6, 1 January 2012, Pages 2166-2169
Journal: Thin Solid Films - Volume 520, Issue 6, 1 January 2012, Pages 2166-2169
نویسندگان
Moongyu Jang, Seongjae Lee,