کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1669409 | 1008883 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characteristics of bottom-gate low temperature nanocrystalline silicon thin film transistor fabricated by hydrogen annealing of gate dielectric layer
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thin film transistors having nanocrystalline silicon as an active layer were fabricated by catalytic-CVD at a low process temperature (â¤Â 200 °C). The tri-layer of the bottom-gate TFT was deposited continuously inside the Cat-CVD reactor. In order to improve the quality of the gate dielectric layer an in-situ hydrogen annealing step was introduced in between the silicon nitride and the nanocrystalline silicon deposition steps. The in-situ hydrogen annealing was effective in reducing the hysteresis in the C-V characteristics and in enhancing the breakdown voltage by decreasing the defects inside the SiNx film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 518, Issue 22, 1 September 2010, Pages 6311-6314
Journal: Thin Solid Films - Volume 518, Issue 22, 1 September 2010, Pages 6311-6314
نویسندگان
Youn-Jin Lee, Kyoung-Min Lee, Wan-Shick Hong,