کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1671422 | 1008916 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Sputter-assisted plasma CVD of wide or narrow optical bandgap amorphous CNx:H films using i-C4H10/N2 supermagnetron plasma
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Amorphous hydrogenated carbon nitride (a-CNx:H) films were prepared on Si and glass (SiO2) substrates using i-C4H10/N2 supermagnetron plasma chemical vapor deposition. By controlling the rf power ratio (i.e., keeping the upper electrode rf power [UPRF] at 800Â W but the lower electrode rf power [LORF] was varied in 0-100Â W), wide or narrow optical bandgap a-CNx:H films were realized. At LORF >Â 25Â W, the deposited a-CNx:H layers became hard and opaque. Optical bandgap of the films was below 0.8Â eV, electrical resistivity was low, and hardness was above 20Â GPa. At LORF <Â 20Â W, however, deposited a-CNx:H layers became soft and transparent. Optical bandgap of the films was above 1.9Â eV, electrical resistivity was high, and hardness was about 7Â GPa. Nitrogen atom concentrations of all of the films were 12.5-13.4 mass% at LORF of 10-100Â W.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 516, Issue 13, 1 May 2008, Pages 4441-4445
Journal: Thin Solid Films - Volume 516, Issue 13, 1 May 2008, Pages 4441-4445
نویسندگان
Haruhisa Kinoshita, Ryo Ikuta, Tomuo Yamaguchi,