کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1673728 | 1008952 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Post deposition annealing temperature effect on silicon quantum dots embedded in silicon nitride dielectric multilayer prepared by hot-wire chemical vapor deposition
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The preparations of the 20-period of a Si quantum dot (QD)/SiNx multilayer in a hot-wire chemical vapor deposition (HWCVD) chamber is presented in this paper. The changes in the properties of Si-QDs after the post deposition annealing treatment are studied in detail. Alternate a-Si:H and SiNx layers are grown in a single SiNx deposition chamber by cracking SiH4, and SiH4 + NH3, respectively at 250 °C. The as-deposited samples are annealed in the temperature range of 800 °C to 950 °C to grow Si-QDs. All the samples are characterized by confocal micro Raman, transmission electron microscope (TEM), and photoluminescence (PL) to study the changes in the film structures after the annealing treatment. The micro Raman analysis of the samples shows the frequency line shifting from 482 cmâ 1 to 500 cmâ 1 indicating the Si transition from an amorphous to a crystalline phase. The TEM micrograph inspection indicates the formation of Si-QDs of size 3 to 5 nm and a density of 5 Ã 1012/cm2. The high resolution TEM micrographs show an agglomeration of Si-QDs with an increase in the annealing temperature. The PL spectra show a peak shifting from 459 nm to 532 nm with increasing the annealing temperature of the film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 12, 30 April 2009, Pages 3488-3491
Journal: Thin Solid Films - Volume 517, Issue 12, 30 April 2009, Pages 3488-3491
نویسندگان
A.K. Panchal, C.S. Solanki,