کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674156 | 1008959 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Epitaxial (Pb,La)(Zr,Ti)O3 thin films on buffered Si(100) by on-axis radio frequency magnetron sputtering
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, we discuss the case for integration of epitaxial (Pb,La)(Zr,Ti)O3 (PLZT) thin films with silicon for electro-optic device applications. PLZT films, approximately 500 nm thick, were grown by on-axis radio frequency magnetron sputtering on CeO2/YSZ-buffered Si(100) substrate with a SrRuO3 electrode layer embedded between CeO2 and PLZT. The structural properties and surface topography of the different oxide layers were examined with X-ray diffraction analysis and atomic force microscopy. The perovskite thin films were predominantly (001)-oriented, with a (002) rocking curve halfwidth of approximately 0.3° and a surface roughness compatible with requirements for application in optical devices. The PLZT cation stoichiometry was assessed from quantitative X-ray photoelectron spectroscopy. These measurements uncovered a substantial depletion of lead in the film surface for layers deposited at substrate temperatures above ~ 600 °C, whereas the surface concentration of La, Zr and Ti remained virtually unaffected over a wide range of growth temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 8, 27 February 2009, Pages 2623-2626
Journal: Thin Solid Films - Volume 517, Issue 8, 27 February 2009, Pages 2623-2626
نویسندگان
Ã. Nordseth, T. Tybell, J.K. Grepstad,