کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1674157 | 1008959 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nucleation and growth of poly-Si films deposited directly on glass substrate in reactive thermal-chemical vapour deposition
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We prepared device-grade polycrystalline silicon thin films on glass substrates at 450 °C, by reactive thermal–chemical vapour deposition employing Si2H6 and F2 as source gases. The nucleation and growth of the poly-Si thin films were investigated, and the process pressures were varied from 533 to 933 Pa. Thin films with thickness of 2 to 200 nm were prepared and their crystallinity and morphological properties were characterized. The incubation time is shorter than 30 s; 533 Pa yields higher crystallinity. However a trade-off exists between growth rates and grain sizes. We proposed a model for comparing our technique with conventional low- pressure chemical vapor deposition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 517, Issue 8, 27 February 2009, Pages 2627–2632
Journal: Thin Solid Films - Volume 517, Issue 8, 27 February 2009, Pages 2627–2632
نویسندگان
Cheolhyun Lim, Jungwoo Lee, Junichi Hanna,