Nanometer transistors for emission and detection of THz radiation

Experimental results concerning detection and emission of THz electromagnetic radiation in nanometer Field Effect Transistors are reviewed. The experiments were performed on GaAs/GaAlAs and GaInAs/AlInAs High Electron Mobility Transistors and Si Metal Oxide Semiconductor Field Effect Transistors at room and liquid helium temperatures. The results are interpreted within a model of the electron plasma instability in the transistor channel.