کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1675140 | 1518092 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Organic bistable memory switching phenomena and H-like aggregates in squarylium dye Langmuir-Blodgett films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have investigated the relationship between the organic bistable memory switching phenomena and H-like aggregates in squarylium dye Langmuir-Blodgett (SQ LB) films. The current-voltage characteristics of SQ LB films sandwiched between the top gold electrode and the bottom aluminum electrode were measured in a dark vacuum vessel at various temperatures as a function of the number of SQ LB films. Ultraviolet-visible absorption spectra were measured at various temperatures. The switching voltage increased as the temperature increased between room temperature and 100 °C, and did not depend on the number of SQ LB films. The results revealed that conductance switching phenomena were induced at the interface between the top gold electrode and SQ LB films, and caused by the presence of H-like aggregates in the SQ LB films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 509, Issues 1â2, 19 June 2006, Pages 149-153
Journal: Thin Solid Films - Volume 509, Issues 1â2, 19 June 2006, Pages 149-153
نویسندگان
Masahito Kushida, Yoshiaki Imaizumi, Kieko Harada, Kazuyuki Sugita,