کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676181 | 1518099 | 2006 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Various applications of silicon nitride by catalytic chemical vapor deposition for coating, passivation and insulating films Various applications of silicon nitride by catalytic chemical vapor deposition for coating, passivation and insulating films](/preview/png/1676181.png)
Various applications of silicon nitride (SiNx) films prepared by catalytic chemical vapor deposition (Cat-CVD) as coating, passivation and insulating films are reviewed. Characteristic features of SiNx films by Cat-CVD are dense (low hydrogen content), low wet-etch rate, low oxygen or water-vapor transmission rate even when prepared at low temperatures below 300 °C and low stress. Therefore, SiNx films prepared by Cat-CVD are suitable as coating and passivation films for electronic devices, mechanical parts and plastic films. SiNx films prepared by Cat-CVD are, of course, also applicable as insulating films used in ultralarge-scale integrated circuits (ULSIs) and thin-film transistors (TFTs). These various applications are introduced, along with a summary of the fundamental properties of the SiNx films and a possible explanation as to why such dense films are obtained even at low temperatures.
Journal: Thin Solid Films - Volume 501, Issues 1–2, 20 April 2006, Pages 149–153