کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676849 | 1518093 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Au-induced lateral crystallization of a-Si1âxGex (x: 0-1) at low temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Au-induced lateral crystallization of amorphous Si1âxGex (x: 0-1) on SiO2 at a low temperature (400 °C) has been investigated. Although the growth velocity decreased with increasing Ge fraction, growth velocity exceeding 20 μm/h was obtained for all Ge fractions. As a result, poly-Si1âxGex with large areas (> 20 μm) was obtained at a low temperature (400 °C). This is a great advantage of Au-induced lateral crystallization compared with Ni. However, the concentrations in the surface regions (depth: 0-20 nm) of the lateral growth regions were high (10-30%), though those in the deeper regions (depth: 20-50 nm) were as small as 1-2%. Removing of the surface regions with the high Au concentrations and gettering of Au atoms in the deeper regions are necessary to apply the grown layers to the device fabrication.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 508, Issues 1â2, 5 June 2006, Pages 44-47
Journal: Thin Solid Films - Volume 508, Issues 1â2, 5 June 2006, Pages 44-47
نویسندگان
Tomohisa Aoki, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao,