کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676854 | 1518093 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of nanocrystalline Epi-Si/γ-Al2O3 heterostructure deposited on Si substrate by spectroscopic ellipsometry
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this work, micro-structural and interfacial studies of the epi-Si/γ-Al2O3 heterostructure were undertaken by spectroscopic ellipsometry, and compared with the results of atomic force microscopy and X-ray photoelectron spectroscopy. The experimental ellipsometric data were fitted with the theoretical calculations using effective medium approximation for each layer of the structure. It was observed that the epitaxial silicon layer consists of a fraction of amorphous Si and crystalline Si. The percentage of amorphous silicon increases with the decrease of deposition temperature and with the increase of the deposition rate. The γ-Al2O3 layer produces a hydrostatic pressure on the Si substrate and the amount of hydrostatic pressure was measured to be 8 Ã 109 dyn/cm2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 508, Issues 1â2, 5 June 2006, Pages 65-69
Journal: Thin Solid Films - Volume 508, Issues 1â2, 5 June 2006, Pages 65-69
نویسندگان
Mosammat Halima Khatun, Mohammad Shahjahan, Ryoki Ito, Kazuaki Sawada, Makoto Ishida,