Growth evolution of Sr-silicide layers on Si(111) and Mg2Si/Si(111) substrates

Single phase Sr2Si layers were successfully grown on Mg2Si/Si substrates for the first time. The Sr2Si layers are formed by an interdiffusion process between the deposited Sr atoms and Mg2Si/Si substrates. It has been confirmed that the formation of the SrSi and SrSi2 phases was suppressed when the layers were grown on Mg2Si/Si substrates. On the other hand, when the layers were grown directly on Si substrates, multiple phase growth took place and the Sr-silicide layers were heavily cracked. The structural properties of the resultant Sr-silicide layers were examined. In addition, the growth evolution of the silicide phases is described.