کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676862 | 1518093 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of strain relaxed Si1−yCy on Si buffer layer by gas-source MBE
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We studied the growth of strain relaxed Si1−yCy films on Si(001) substrates. The critical thickness of Si1−yCy on Si was calculated using People's equation. The strain relaxed Si1−yCy films on Si substrates were grown by gas source MBE (GS-MBE) and it was found from cross sectional TEM analysis that the use of Si buffer layers was very important in order to obtain high quality Si1−yCy films. Lattice relaxation was clearly observed when the thickness of the Si1−yCy layers exceeded their critical thickness. The relaxation ratio of Si1−yCy films with a carbon concentration of 1.0% was 40% in the vertical direction when the film thickness was 1800 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 508, Issues 1–2, 5 June 2006, Pages 99–102
Journal: Thin Solid Films - Volume 508, Issues 1–2, 5 June 2006, Pages 99–102
نویسندگان
Hanae Ishihara, Masahiko Murano, Tatsuro Watahiki, Akira Yamada, Makoto Konagai, Yoshio Nakamura,