Crystallinity and strain control growth of SiGe using ion sputtering technique

Epitaxial film growth properties of Si and SiGe using an ion-beam sputtering technique are investigated. Bombardment effects by the particles with a high kinetic energy induced in ion sputtering process are discussed. Epitaxial growth was enhanced and lateral epitaxial growth was evidenced to bring about by the bombardment. The crystallinity of the films depended on the kinetic energy of sputtering gas. Better crystallinity films were prepared using sputtering gas atoms with large mass and low kinetic energy. The strain of the films was found to decrease with decreasing ion acceleration voltage.