کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676885 | 1518093 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of electronic charged states of P-doped Si quantum dots using AFM/Kelvin probe
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Phosphorous doping to Si quantum dots was performed by a pulse injection of 1% PH3 diluted with He during the dot formation on thermally grown SiO2 from thermal decomposition of pure SiH4, and electron charging to and discharging from P-doped Si dots were studied to characterize their electronic charged states using a Kelvin probe technique in atomic force microscopy (AFM). The potential change corresponding to the extraction of one electron from each of the P-doped Si dots was observed after applying a tip bias as low as + 0.2 V while for undoped Si dots, with almost the same size as P-doped Si dots, almost the same amount of the potential change was detectable only when the tip bias was increased to â¼Â 1 V. It is likely that, for P-doped Si dots, the electron extraction from the conduction band occurs and results in a positively charged state with ionized P donor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 508, Issues 1â2, 5 June 2006, Pages 186-189
Journal: Thin Solid Films - Volume 508, Issues 1â2, 5 June 2006, Pages 186-189
نویسندگان
Katsunori Makihara, Jun Xu, Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki,