کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676899 | 1518093 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thickness-dependent stress-relaxation in thin SGOI structures and its improvement
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The oxidation-induced Ge condensation process of SiGe/Si on insulator structures has been investigated. The relaxation rate obtained in the SiGe layers on insulator (SGOI) abruptly decreased with decreasing SGOI thickness below 50 nm. In order to enhance the relaxation rate in the ultra-thin SGOI, the new technique combined with H+ irradiation with a medium dose (5 × 1015 cm− 2) and post-annealing (1200 °C) has been developed. It was demonstrated that the highly relaxed (70%) ultra-thin SGOI with a low defect density (8 × 106 cm− 2) has been realized by this technique.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 508, Issues 1–2, 5 June 2006, Pages 247–250
Journal: Thin Solid Films - Volume 508, Issues 1–2, 5 June 2006, Pages 247–250
نویسندگان
Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao,