Fabrication and characterization of strained Si1−yCy n-MOSFETs grown by Hot Wire Cell method

By applying low-temperature process below 800 °C, we have fabricated n-MOSFET with a strained Si1−yCy channel. The strained Si1−yCy films were grown on Si substrate with a substrate temperature of 200 °C by using a Hot Wire Cell method. In the previous work, the degradation of the device performance was found due to the poor interface between the directly grown Si1−yCy channel layer and the source/drain regions. In this work, we applied the new device fabrication process and improved the electrical characteristics of the Si1−yCy MOSFET. Furthermore, it was succeeded to enhance the effective electron mobility of n-MOSFET by introducing stress into the Si1−yCy channels.