2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms

We explore the feasibility of combining the high growth rates of the Low Energy Plasma Enhanced Chemical Vapor Deposition (LEPECVD) process with abrupt doping profiles. To this end, we compare the low-temperature magneto-transport properties of symmetrically doped and inverted Si1 − xGex heterostructures. Very high mobility has been found in the inverted structure, indicative of sharp doping profiles with negligible dopant segregation.