کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676924 | 1518093 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain dependence of hole Hall mobility in compressively strained Ge channel heterostructures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigated the strain dependence of hole Hall mobility in compressively strained Ge channel modulation-doped (MOD) heterostructures. It was experimentally demonstrated that hole Hall mobility increased with increasing strain of the Ge channel layer at all temperature regions, irrespective of the channel layer thickness and the growth method of SiGe buffer layers. Maximum hole Hall mobilities of 1640 cm2/V s and 13,400 cm2/V s were obtained at room temperature and 8 K, respectively, when the channel was grown on the SiGe buffer layer with the Ge composition of 53%, corresponding to a compressive strain of as high as 2%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 508, Issues 1–2, 5 June 2006, Pages 355–358
Journal: Thin Solid Films - Volume 508, Issues 1–2, 5 June 2006, Pages 355–358
نویسندگان
Yasuhiro Abe, Hikaru Sato, Yusuke Ozawa, Kentarou Sawano, Kiyokazu Nakagawa, Yasuhiro Shiraki,