Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET

We have proposed Metal Source/Drain MOSFETs (MSD-MOSFETs) with Ge-on-Insulator (GOI) channels using germanides as source/drain metal material. Here the characterization of Schottky barrier hieght (SBH) at the germanide/Ge interfaces is a key issue for a Ge channel MSD-MOSFET. However, there are few published reports on the subject. In this paper, we present the results of the characterization of platinum germanide/Ge interfaces. SBHs of platinum germanide/n- and p-Ge(100) junctions were evaluated to examine the applicability of platinum germanide to MSD-MOSFETs. The SBH for platinum germanide/p-Ge(100) was found to be as low as 0.1 eV over a wide range of anneal temperatures. As a result, we conclude that platinum germanide is a promising S/D material for Ge channel MSD-MOSFETs.