کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676928 | 1518093 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Si/β-FeSi2/Si (SFS) heterostructures were grown epitaxially on Si(001) by reactive deposition epitaxy (RDE) for β-FeSi2 and by molecular beam epitaxy (MBE) for Si. Distinct 1.54-μm photoluminescence was observed at 77 K for SFS with a β-FeSi2 thickness ranging from 5 to 10 nm. When the thickness of the β-FeSi2 layer was increased up to 40 nm, the PL intensity of β-FeSi2 decreased and the full-width at half maximum (FWHM) of the PL peak increased. Reflection high-energy electron diffraction observation revealed that the Si overlayer has a tendency to form polycrystalline structures with the increase of β-FeSi2 thickness. The degradation of PL was also observed for samples annealed at 900 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 508, Issues 1â2, 5 June 2006, Pages 371-375
Journal: Thin Solid Films - Volume 508, Issues 1â2, 5 June 2006, Pages 371-375
نویسندگان
T. Sunohara, K. Kobayashi, T. Suemasu,